commercial lasers key features ? 200 mw kink-free power ? narrow spectral width ? high efficiency ? low astigmatism ? high reliability high-resolution applications including optical data storage, image recording, spectral analysis, printing, point-to-point free-space communications and frequency doubling all require diffractio n-limited sources. faster writing, wider dynamic range and better signal-to-noise ratio may be achieved with jdsu?s high-reliability 5400 series single-mode diode lasers. available in power levels up to 200 mw kink-free, this advanced diode laser combines a quantum well structure and a real-refractive index-guided single- mode waveguide to provide high power, low astigmatism, narrow spectral width and a single spatial mode gaussian far field. our 5400 series diode lasers are among the most reliable high-power diode lasers available in the industry today. the 5400 series diode lasers operate in single longitudinal mode under some conditions. like in all fabry-perot index-guided diode lasers, spectral broadening, mode hopping and longitudinal mode instability may occur due to small changes in drive current, diode-junction te mperature or optical feedback. the unique diode structure features high reliability with long operating life and very low early failure rate. the highest brightness (20 mw/cm 2 steradian) is provided by our 5430. applications ? illumination ? printing ? sensing ? medical applications ? imaging diode lasers, single-mode 50 to 200 mw, 810/830/852 nm 54xx series north america : 800 498-jdsu (5378) website : www.jdsu.com worldwide : +800 5378-jdsu
dimensions diagrams 2 2 54xx series diode lasers (specifications in inches [mm] unless otherwise noted.) standard tolerances inches: x.xx = 0.02 mm: x.x = 0.5 x.xxx = 0.010 x.xx = 0.25 package style: sot-148 window (g1) 0.10 (2.5) 0.05 (1.3) window: ar coating, both surfaces thickness: 0.0100 0.002 (0.25 0.05) 0.26 nom. (6.6) 0.20 (5.1) 0.14 (3.5) laser facet depth = 0.04 (1.0) nom. 0.14 (3.6) 0.260 0.005 (6.60 0.13) 3 1 2 0.354 0.005 (9.00 0.13) laser output pinout pin description 1 laser cathode (?) 2 laser anode, mpd cathode and case ground 3 monitor photodiode anode (+) package style: to-56 window (j1) pinout pin description 1 laser cathode (?) 2 laser anode, mpd cathode and case ground 3 monitor photodiode anode (+) 2 0.17 (4.2) 0.05 (1.3) 0.14 (3.6) 0.08 (2.0) 0.04 (1.0) 0.26 (6.5) 0.14 (3.6) 0.10 (2.4) window: ar coating, both surfaces thickness: 0.010 0.001 (0.25 0.03) laser facet depth = 0.05 (1.2) nom. 3 1 laser output
3 54xx series diode lasers electro-optical specifications parameter symbol 5400 series 5410 series unit mi n. typ. max. min. typ. max. laser characteristics cw output power, kink-free 2 p o ? ? 50 ? ? 100 mw center wavelength c ? (note 5 ) ? ? (note 5 )? spectral width 1 ? ?35 ?3 5 nm slope efficiency d = p o /(i op ?i th ) 0.75 0.85 ? 0.75 0.85 ? mw/ma conversion efficiency = p o /(i op v op ) ? 30 ? ? 30 ? % emitting dimensions w x h ? 3 x 1 ? ? 3 x 1 ? m fwhm beam divergence parallel to junction // ?9? ?9 ? degrees perpendicular to junction ?30? ?30? degrees threshold current i th ? 35 45 ? 35 45 ma operating current i op ? 95 105 ? 160 170 ma operating voltage v op ? (note 4 ) ? ? (note 4 )? series resistance r s ? 4.0 6.0 ? 4.0 6.0 thermal resistance r th ? 60 ? ? 60 ? c/w recommended case temperature t c -20 ? 30 -20 ? 30 c absolute maximum ratings reverse voltage v rl ??3 ?? 3 v case operating temperature t op -20 ? 50 -20 ? 50 c storage temperature range t stg -40 ? 80 -40 ? 80 c lead soldering temperature t is ? ? 250 ? ? 250 c (5 sec.) monitor photodiode sensitivity g1 package ? 0.1 ? 20 0.1 ? 20 a/mw j1 package ? 3.0 ? 24 3.0 ? 24 a/mw capacitance ? ? 6 ? ? 6 ? pf breakdown voltage v bd ? 25 ? ? 25 ? v operating voltage v op ?10? ?10? v 1. emission bandwidth for 90% integrated power. 2. typical values at 25 c and 0.6 na collection optics. 3. features common to all 5400 series diode lasers include: a. duty factor of 100%. b. temperature coefficient of wavelength is approximately 0.3 nm/c. c. temperature coefficient of threshold current can be modeled as: i th2 = i th1 exp [(t 2 ? t 1 )/t 0 ] where t 0 is a device constant of about 110 k. d. temperature coefficient of operating current is approximately 0.5 to 0.7% per c. 4. forward voltage is typically: v f = 1.5 v + i op x r s . 5. wavelength ranges for the 5400 and 5410 series: 800-820 nm 810-850 nm 842-862 nm a variety of part numbers are available that each designate a particular subset within these wavelength ranges. consult tables on page 5. 6. astigmatism is less than 5 m. available configurations 5400 series 5410 series 5420 series 5430 series 5401-g1 5411-g1 5421-g1 5431-g1 5401-j1 5411-j1 5421-j1 5431-j1
4 54xx series diode lasers electro-optical specifications parameter symbol 5420 series 5430 series unit mi n. typ. max. min. typ. max. laser characteristics cw output power, kink-free 2 p o ? ? 150 ? ? 200 mw center wavelength c ? (note 5 ) ? ? (note 5 )? spectral width 1 ? ?35 ?3 5 nm slope efficiency d = p o /(i op ?i th ) 0.75 0.85 ? 0.75 0.85 ? mw/ma conversion efficiency = p o /(i op v op ) ? 30 ? ? 30 ? % emitting dimensions w x h ? 3 x 1 ? ? 3 x 1 ? m fwhm beam divergence parallel to junction // ?9? ?9 ? degrees perpendicular to junction ?30? ?30? degrees threshold current i th ? 35 45 ? 40 50 ma operating current i op ? 210 230 ? 270 300 ma operating voltage v op ? (note 4 ) ? ? (note 4 )? series resistance r s ? 4.0 6.0 ? 4.0 6.0 thermal resistance r th ? 60 ? ? 60 ? c/w recommended case temperature t c -20 ? 30 -20 ? 30 c absolute maximum ratings reverse voltage v rl ??3 ?? 3 v case operating temperature t op -20 ? 50 -20 ? 50 c storage temperature range t stg -40 ? 80 -40 ? 80 c lead soldering temperature t is ? ? 250 ? ? 250 c (5 sec.) monitor photodiode sensitivity ? 0.1 ? 20 0.1 ? 20 a/mw capacitance ? ? 6 ? ? 6 ? pf breakdown voltage v bd ? 25 ? ? 25 ? v operating voltage v op ?10? ?10? v 1. emission bandwidth for 90% integrated power. 2. typical values at 25 c and 0.6 na collection optics. 3. features common to all 5400 series diode lasers include: a. duty factor of 100%. b. temperature coefficient of wavelength is approximately 0.3 nm/c. c. temperature coefficient of threshold current can be modeled as: i th2 = i th1 exp [(t 2 ? t 1 )/t 0 ] where t 0 is a device constant of about 110 k. d. temperature coefficient of operating current is approximately 0.5 to 0.7% per c. 4. forward voltage is typically: v f = 1.5 v + i op x r s . 5. wavelength ranges for the 5420 series: 800-820 nm 810-850 nm 842-862 nm wavelength range for the 5430 series is limited to 820-840 nm. a variety of part numbers are available that each designate a particular subset within these wavelength ranges. consult tables on page 5. 6. astigmatism is less than 5 m. continued
5 54xx series diode lasers typical optical characteristics ordering information for more information on this or other products and their availability, please contact your local jdsu account manager or jdsu directly at 1-800-498-jdsu (5378) in north america and +800-5378-jdsu worldwide or via e-mail at customer.service@jdsu.com. 100 40 80 120 160 200 0 5410 cw output power (mw) 5400 50 current (ma) (degrees) 40 20 0 20 40 fwhm = 30 o light vs. current characteristics light vs. current characteristics light vs. current characteristics far field energy distribution far field energy distribution 150 50 100 150 200 0 75 current (ma) 5420 200 60 120 180 240 300 0 100 current (ma) 5430 (degrees) 20 10 0 10 20 200 mw 160 mw 100 mw fwhm = 9 o sample: 54-00202 part number power wavelength package 54-00202 50 mw 810 (5) 5.6 mm to-56 54-00203 50 mw 830 (-10/+20) 5.6 mm to-56 call for par t numb e r 50 mw 830 (-10/+20) 9 mm s ot-148 54-00204 50 mw 852 (10) 5.6 mm to-56 54-00205 100 mw 810 (5) 5.6 mm to-56 54-00206 100 mw 830 (-10/+20) 5.6 mm to-56 54-00207 100 mw 852 (10) 5.6 mm to-56 call for par t numb e r 150 mw 810 (5) 9 mm s ot-148 54-00210 150 mw 810 (5) 5.6 mm to-56 call for par t numb e r 150 mw 830 (10) 9 mm s ot-148 54-00211 150 mw 830 (10) 5.6 mm to-56 call for par t numb e r 150 mw 852 (10) 9 mm s ot-148 54-00212 150 mw 852 (10) 5.6 mm to-56 call for par t numb e r 200 mw 830 (10) 9 mm s ot-148 54-00213 200 mw 830 (10) 5.6 mm to-56 54-00214 200 mw 852 (10) 5.6 mm to-56
54xx series diode lasers north america : 800 498-jdsu (5378) website : www.jdsu.com worldwide : +800 5378-jdsu user safety safety and operating considerations the laser light emitted from this diode laser is invisible and may be harmful to the human eye. avoid looking directly into the diode laser or into the collimated beam along its optical axis when the device is in operation. caution: the use of optical instruments with this product will increase eye hazard. operating the diode laser outside of its maximum ratings may cause device failure or a safety hazard. power supplies used with the component must be employed such that the maximum peak optical power cannot be exceeded. cw diode lasers may be damaged by excessive drive current or switching transients. when using power supplies, the diode laser should be connected with the main power on and the output voltage at zero. the current should be increased slowly while monitoring the diode laser output power and the drive current. device degradation accelerates with increased temperature, and therefore careful attention to minimize the case temperature is advised. for example, life expectancy will decrease by a factor of four if the case is operated at 50 c rather than 30 c. a proper heatsink for the diode laser on a thermal radiator wi ll greatly enhance laser life. firmly mount the laser on a radiato r with a thermal impedance of less than 2 c/w for increased reliability. esd protection ? electrostatic discharge is the primary cause of unexpected diode laser failure. take extreme precaution to prevent esd. use wrist straps, grounded work surfaces and rigorous antistatic techniques when handling diode lasers. labeling 21 cfr 1040.10 compliance because of the small size of these devices, each of the labels shown is attached to the individual shipping container. they are illustrated here to comply with 21 cfr 1040.10 as applicable und er the radiation control for health and safety act of 1968. serial number identification label output power danger label package aperture labels jds uniphase corporation model: manufactured: this laser product complies with 21 cfr 1040 as applicable wavelength: i op: s/n: invisible laser radiation is emit- ted as shown. danger laser radiation 3052 g1, j1 p ac kag e diod es product specifications and descriptions in this document subject to change without notice. ? 2008 jds uniphase corporation 101 27872 007 0608 54xxdiodelaser.ds.cl.ae june 2008 *see manual invisible laser radiation* gaalas diode 500 mw avg. class iii b laser product 3009 danger avoid direct exposure to beam
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